Datasheet Details
- Part number
- IRF520N
- Manufacturer
- International Rectifier
- File Size
- 116.90 KB
- Datasheet
- IRF520N_InternationalRectifier.pdf
- Description
- Power MOSFET
IRF520N Description
PD - 91339A IRF520N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF520N Features
* 10 4)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M
A
IN TE R N A T IO N
IRF520N Applications
* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB
Absolute Maximum Ratings
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