IRF520N Datasheet - International Rectifier

IRF520N Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF520N Features

* 10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M A IN TE R N A T IO N

IRF520N_InternationalRectifier.pdf