IRF520 N-Channel Power MOSFET

Fairchild Semiconductor

Description

Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transis.

📥 Download Datasheet

IRF520 Datasheet Preview — Preview of IRF520 PDF

Datasheet Specifications

Part number: IRF520
Manufacturer: Fairchild Semiconductor
File Size: 89.46 KB
Datasheet: IRF520_FairchildSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* 9.2A, 100V
* rDS(ON) = 0.270Ω
* SOA is Power Dissipation Limited
* Single Pulse Avalanche Energy Rated
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Ordering Info

IRF520 Distributors

📁 Related Datasheet

IRF520FI IRF520L IRF520N IRF520NL IRF520NLPBF IRF520NPbF

📌 All Tags

IRF520 N-Channel Power MOSFET Fairchild Semiconductor

Fairchild Semiconductor IRF520-like datasheet