* 9.2A, 100V
* rDS(ON) = 0.270Ω
* SOA is Power Dissipation Limited
* Single Pulse Avalanche Energy Rated
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF520
Fairchild Semiconductor
89.46 KB
N-channel power mosfet.
Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis.
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