IRF520 Datasheet (Fairchild Semiconductor)

IRF520, N-Channel Power MOSFET

Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors req

IRF520 Features

* 9.2A, 100V

* rDS(ON) = 0.270Ω

* SOA is Power Dissipation Limited

* Single Pulse Avalanche Energy Rated

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for