Datasheet Specifications
- Part number
- IRF7317
- Manufacturer
- International Rectifier
- File Size
- 156.86 KB
- Datasheet
- IRF7317_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
Description
PD - 9.1568B PRELIMINARY l l l l l IRF7317 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MO.
Features
* 6 800 600 4 400 C rs s 2 200 0 1 10 100 A 0 0 5 10 15 20 25 30 A - -V D S , D rain-to-S ource V oltage (V ) Q G , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.Applications
* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package iIRF7317 Distributors
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