IRF7319 Datasheet - International Rectifier

HEXFET Power MOSFET

IRF7319 Features

* Voltage (V) Q G , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0

IRF7319 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7319 Datasheet (137.17 KB)

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IRF7319

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International Rectifier

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137.17 KB

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Hexfet power mosfet.
PD - 9.1606A PRELIMINARY l l l l l IRF7319 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MO.

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IRF7319 HEXFET Power MOSFET International Rectifier

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IRF7319 Features

IRF7319 General Description

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