Datasheet Specifications
- Part number
- IRF7319
- Manufacturer
- International Rectifier
- File Size
- 137.17 KB
- Datasheet
- IRF7319_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
Description
PD - 9.1606A PRELIMINARY l l l l l IRF7319 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MO.
Features
* Voltage (V) Q G , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0Applications
* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package iIRF7319 Distributors
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