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IRF7401 Power MOSFET

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Description

PD - 9.1244C IRF7401 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Features

* .255 ) 1.78 (.070) 8X Part Marking Information SO-8 EXAM PLE : TH IS IS AN IR F7 101 D ATE C O DE (YW W ) Y = LAST D IGIT O F TH E YEAR W W = W EEK XXXX W AFER LO T C O D E (LAST 4 D IG ITS) 31 2 IN TER N ATIO N AL R EC TIF IER LO G O F710 1 TOP PAR T N UM BER BO TTO M IRF7401 Tape & Reel I

Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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