IRF7410GPbF HEXFET Power MOSFET

International Rectifier

Description

PD - 96247 IRF7410GPbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Ha.
These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance p.

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Datasheet Specifications

Part number: IRF7410GPbF
Manufacturer: International Rectifier
File Size: 214.54 KB
Datasheet: IRF7410GPbF-InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* 1. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www. irf. com/package/ Data and specifications subject to change without notice. Th

Applications

* . The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package

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IRF7410GPbF HEXFET Power MOSFET International Rectifier

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