IRF7413 Datasheet - International Rectifier

IRF7413 Power MOSFET

PD- 91330F SMPS MOSFET Applications l High frequency DC-DC converters IRF7413 HEXFET® Power MOSFET RDS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD.

IRF7413 Features

* 2A.

* Pulse width ≤ 300µs; duty cycle ≤ 2%. ISD ≤ 7.2A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site.

IRF7413 Datasheet (235.81 KB)