* he output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and th
IRF7413Z Datasheet (263.00 KB)
IRF7413Z
International Rectifier
263.00 KB
Hexfet power mosfet.
PD - 94646
IRF7413Z
HEXFET® Power MOSFET
Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graph.
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