The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
The IRF8707GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.
PD - 96264 IRF8707GPbF Applications HEXFET® Power MOSFET l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking VDSS RDS(on) max Qg :30V 11.9m @VGS = 10V 6.2nC Systems Benefits l Very Low Gate Charge l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.
Gate Rating l 100% tested for Rg S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 l Lead
IRF8707GPbF Features
* 8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃPAÃG@69ÃAPSÃTPG9@SDIB
IRF8707GPbF-InternationalRectifier.pdf
Datasheet Details
IRF8707GPbF
International Rectifier
244.28 KB
Power mosfet.
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