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IRFB9N30A

Power MOSFET

IRFB9N30A Features

* 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S

IRFB9N30A General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation level.

IRFB9N30A Datasheet (137.03 KB)

Preview of IRFB9N30A PDF

Datasheet Details

Part number:

IRFB9N30A

Manufacturer:

International Rectifier

File Size:

137.03 KB

Description:

Power mosfet.
PD- 91832 IRFB9N30A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Re.

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IRFB9N30A Power MOSFET International Rectifier

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