IRFB9N30A Datasheet - International Rectifier

IRFB9N30A, Power MOSFET

PD- 91832 IRFB9N30A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Re.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Datasheet Details

Part number:

IRFB9N30A

Manufacturer:

International Rectifier

File Size:

137.03 KB

Description:

Power MOSFET

Features

* 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S

Applications

* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG

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IRFB9N30A Power MOSFET International Rectifier

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