IRFB9N30APBF Datasheet - International Rectifier

IRFB9N30APBF POWER MOSFET

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at lower dissipation levels.

IRFB9N30APBF Features

* 1.22 (.048) LEAD ASSIGNMENTS HELXEFAE1DT-AGSASTIGENMEINGTBSTs, CoPACK 1- GAT2E- DRAIN 1- GATE 2- DRA3IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.01

IRFB9N30APBF Datasheet (124.85 KB)