IRFB9N30APBF Datasheet, Mosfet, International Rectifier

IRFB9N30APBF Features

• Mosfet 400 ID TOP 4.2A 5.9A BOTTOM 9.3A 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current 400 380 360 3

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Part number:

IRFB9N30APBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized dev

IRFB9N30APBF Application

• Applications at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its

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IRFB9N30APBF

International Rectifier

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