IRFB9N30APBF Datasheet - International Rectifier

IRFB9N30APBF, POWER MOSFET

l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements l Lead-Free.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low o.

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IRFB9N30APBF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFB9N30APBF

Manufacturer:

International Rectifier

File Size:

124.85 KB

Description:

POWER MOSFET

Features

* 1.22 (.048) LEAD ASSIGNMENTS HELXEFAE1DT-AGSASTIGENMEINGTBSTs, CoPACK 1- GAT2E- DRAIN 1- GATE 2- DRA3IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.01

Applications

* at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current,

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IRFB9N30APBF POWER MOSFET International Rectifier

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