Datasheet Details
- Part number
- IRFB9N30APBF
- Manufacturer
- International Rectifier
- File Size
- 124.85 KB
- Datasheet
- IRFB9N30APBF-InternationalRectifier.pdf
- Description
- POWER MOSFET
IRFB9N30APBF Description
l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements l Lead-Free.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low o.
IRFB9N30APBF Features
* 1.22 (.048)
LEAD ASSIGNMENTS HELXEFAE1DT-AGSASTIGENMEINGTBSTs, CoPACK
1- GAT2E- DRAIN 1- GATE
2- DRA3IN- SOURCE 2- COLLECTOR
3- SOU4R-CDERAIN 3- EMITTER
4- DRAIN
4- COLLECTOR
3X
1.40 (.055) 1.15 (.045)
2.54 (.100)
3X
0.93 (.037) 0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022) 0.46 (.01
IRFB9N30APBF Applications
* at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current,
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