IRFB9N60 Datasheet - International Rectifier

IRFB9N60, Power MOSFET

PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive R.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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IRFB9N60_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFB9N60

Manufacturer:

International Rectifier

File Size:

135.44 KB

Description:

Power MOSFET

Features

* (.55 5) 1 3.47 (.53 0) 4 .0 6 (.160 ) 3 .5 5 (.140 ) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.0 14 ) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O

Applications

* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG

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IRFB9N60 Power MOSFET International Rectifier

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