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IRFH7004TRPBF - HEXFET Power MOSFET

Download the IRFH7004TRPBF datasheet PDF. This datasheet also covers the IRFH7004PBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 125°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E.

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Note: The manufacturer provides a single datasheet file (IRFH7004PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRFH7004TRPBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFH7004TRPBF. For precise diagrams, and layout, please refer to the original PDF.

StrongIRFET™ IRFH7004PbF Applications l l l l l l l l l HEXFET® Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-...

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lications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 1.1mΩ 1.

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