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IRFH7004PBF - HEXFET Power MOSFET

Key Features

  • 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 125°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E.

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StrongIRFET™ IRFH7004PbF Applications l l l l l l l l l HEXFET® Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 1.1mΩ 1.