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IRFHM4231TRPBF Power MOSFET

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Description

VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 3.4 4.6 9.7 40 V m nC A Applications *Control MOSF.
Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component.

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Features

* Low Charge (typical 9.7nC) Low RDSon (

IRFHM4231TRPBF Distributors

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IRFHM4231TRPBF Power MOSFET International Rectifier
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