IRFI4110GPBF Datasheet - International Rectifier

IRFI4110GPBF Power MOSFET

PD - 96347 IRFI4110GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) D 100V 3.7mΩ 4.5mΩ 72A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free D G G D S S TO-.

IRFI4110GPBF Features

* ion per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche.

IRFI4110GPBF Datasheet (307.01 KB)