Datasheet Details
Part number:
IRFI4110GPBF
Manufacturer:
International Rectifier
File Size:
307.01 KB
Description:
Power MOSFET
IRFI4110GPBF-InternationalRectifier.pdf
Datasheet Details
Part number:
IRFI4110GPBF
Manufacturer:
International Rectifier
File Size:
307.01 KB
Description:
Power MOSFET
Features
* ion per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche.Applications
* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) D 100V 3.7mΩ 4.5mΩ 72A Benefits l Improved Gate, Avalanche and Dynamic dv/dIRFI4110GPBF Distributors
📁 Related Datasheet
📌 All Tags