IRFI7536GPBF Datasheet - International Rectifier

IRFI7536GPBF Power MOSFET

IRFI7536GPbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G S VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.7m: 3.4m: 86A D G D S TO-220 Full-Pak G D S Gate Dra.

IRFI7536GPBF Features

* r in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakd

IRFI7536GPBF-InternationalRectifier.pdf