IRFL1006 Datasheet - International Rectifier

IRFL1006, Power MOSFET

PD - 91876 IRFL1006 HEXFET® Power MOSFET l l l l l Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rat.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFL1006_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFL1006

Manufacturer:

International Rectifier

File Size:

127.51 KB

Description:

Power MOSFET

Features

* T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5 .40 (.6 0 7) 1 1 .90 (.4 6 9) 4 7 .1 0 (.2 7 9 ) 6 .9 0 (.2 7 2 ) 1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 ) 2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 ) 3

Applications

* The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for h

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IRFL1006 Power MOSFET International Rectifier

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