IRFP3306PBF
International Rectifier
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Power mosfet.
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IRFP3306 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP3306，IIRFP3306
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.2mΩ ·Enhancement mode: ·100% avalanche te.
IRFP3006 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP3006，IIRFP3006
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤2.5mΩ ·Enhancement mode: ·100% avalanche t.
IRFP3006PBF - Power MOSFET
(International Rectifier)
IRFP3006PbF
60V 2.1m 2.5m
270A 195A
G
VDSS RDS(on) typ. max.
ID (Silicon Limited) ID (Package Limited)
D
D G
S
S
TO-247AC
Application.
IRFP3077 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP3077，IIRFP3077
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanche te.
IRFP3077PBF - Power MOSFET
(International Rectifier)
PD - 97126
IRFP3077PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l.
IRFP31N50L - Power MOSFET
(International Rectifier)
..
PD - 94081
SMPS MOSFET
IRFP31N50L
Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power .
IRFP31N50L - Power MOSFET
(Vishay Siliconix)
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = .
IRFP31N50L - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFP31N50L
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.18Ω (MAX) ·Enhancement mode:
Vth = 3.0 to 5.0V (VDS .
IRFP3205 - N-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
IRFP3205
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-3P N MOS 。N-Channel MOSFET in a TO-3P Plastic Package.
/ Features
，。 Low On-Resista.
IRFP3206 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP3206，IIRFP3206
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.0mΩ ·Enhancement mode: ·100% avalanche te.
