IRFR3711Z Datasheet - International Rectifier

IRFR3711Z HEXFET Power MOSFET

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS 20V PD - 94651B IRFR3711Z IRFU3711Z HEXFET® Power MOSFET RDS(on) max Qg 5.7m: 18nC D-Pak IRFR3711Z I-Pak IRFU3711Z Absolute Maximum Ratings Parameter VDS Drain-to-Source Volt.

IRFR3711Z Features

* in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain curren

IRFR3711Z Datasheet (211.15 KB)