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IRFR3710ZPbF, IRFR3710ZPbF-1 Datasheet - Infineon

IRFR3710ZPbF, IRFR3710ZPbF-1, Power MOSFET

IRFR3710ZPbF .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax

Applications

* S G D- Pak IRFR3710ZPbF Refer to page 9 for package outline G Gate D Drain S Source Base part number IRFR3710ZPbF Package Type D-Pak Standard Pack Form Tape and Reel Left Tape and Reel Quantity 3000 2000 Orderable Part Number IRFR3710ZTRLPbF IRFR3710ZTRPbF Absolute Maximum Ratings Symbol

IRFR3710ZPbF-1-Infineon.pdf

This datasheet PDF includes multiple part numbers: IRFR3710ZPbF, IRFR3710ZPbF-1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRFR3710ZPbF, IRFR3710ZPbF-1

Manufacturer:

Infineon ↗

File Size:

449.49 KB

Description:

Power MOSFET

Note:

This datasheet PDF includes multiple part numbers: IRFR3710ZPbF, IRFR3710ZPbF-1.
Please refer to the document for exact specifications by model.

IRFR3710ZPbF Distributors

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