IRFR3910
International Rectifier
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Power mosfet. l D VDSS = 100V G S RDS(on) = 0.115Ω ID = 16A Fifth Generation HEXFETs from International Rectifier utilize advanced processing t
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IRFR3910 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFR3910, IIRFR3910
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤115mΩ ·Enhancement mode: ·100% avalanche t.
IRFR3910PBF - HEXFET Power MOSFET
(International Rectifier)
PD - 95079A
IRFR3910PbF IRFU3910PbF
•
Lead-Free
..
.irf.
1
1/7/05
IRFR/U3910PbF
2
.irf.
IRFR/U3910PbF
.irf.co.
IRFR3911 - SMPS MOSFET
(International Rectifier)
PD - 94272
SMPS MOSFET
Applications High frequency DC-DC converters
HEXFET Power MOSFET
l
IRFR3911 IRFU3911 ®
ID
14A
VDSS
100V
RDS(on) max
0.115Ω.
IRFR3911PBF - SMPS MOSFET
(International Rectifier)
PD - 95373A
SMPS MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
HEXFET Power MOSFET
IRFR3911PbF IRFU3911PbF ®
ID
14A 0.115Ω
VDS.
IRFR310 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRFR310
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFR310 - Power MOSFET
(International Rectifier)
.
IRFR310 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSF.
IRFR310 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFR310
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤3.6Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFR310A - Power MOSFET
(Fairchild Semiconductor)
..
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .
IRFR310B - 400V N-Channel MOSFET
(Fairchild Semiconductor)
IRFR310B / IRFU310B
November 2001
IRFR310B / IRFU310B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
