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IRFR310B - 400V N-Channel MOSFET

IRFR310B Description

IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFR310B Features

* 1.7A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D-PAK IRFR Series I-PAK G D S IRFU S

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