IRFR310B Datasheet - Fairchild Semiconductor

IRFR310B - 400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFR310B Features

* 1.7A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G! G S D-PAK IRFR Series I-PAK G D S IRFU S

IRFR310B_FairchildSemiconductor.pdf