Datasheet4U Logo Datasheet4U.com

IRFR320B Datasheet - Fairchild Semiconductor

IRFR320B 400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFR320B Features

* 3.1A, 400V, RDS(on) = 1.75Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

IRFR320B_FairchildSemiconductor.pdf

Preview of IRFR320B PDF
IRFR320B Datasheet Preview Page 2 IRFR320B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFR320B

Manufacturer:

Fairchild Semiconductor

File Size:

672.47 KB

Description:

400v n-channel mosfet.

📁 Related Datasheet

IRFR320 Power MOSFET (International Rectifier)

IRFR320 N-Channel Power MOSFETs (Intersil Corporation)

IRFR320 Power MOSFET (Vishay Siliconix)

IRFR320 N-Channel Power MOSFETs (Fairchild Semiconductor)

IRFR320 N-Channel MOSFET (INCHANGE)

IRFR320A Power MOSFET (Samsung)

IRFR310 Power MOSFET (Fairchild Semiconductor)

IRFR310 Power MOSFET (International Rectifier)

TAGS

IRFR320B IRFR320B 400V N-Channel MOSFET Fairchild Semiconductor

IRFR320B Distributor