IRFR6215 Datasheet - International Rectifier

IRFR6215 Power MOSFET

l IRFR/U6215 HEXFET® Power MOSFET D VDSS = -150V RDS(on) = 0.295Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ru.

IRFR6215 Features

* Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 www.datasheet4u.com IRFR/U6215 Package Outline TO-252AA O

IRFR6215_InternationalRectifier.pdf