Datasheet4U.com

IRFR034 - Power MOSFET

Fairchild Semiconductor

📥 Download Datasheet

IRFR034 Datasheet Preview — Preview of IRFR034 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IRFR034
Manufacturer	Fairchild ↗ Semiconductor
File Size	225.57 KB
Description	Power MOSFET
Datasheet	IRFR034-FairchildSemiconductor.pdf

IRFR034 Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
Lower RDS(ON): 0.030Ω (Typ. ) BVDSS = 60 V RDS(on) = 0.04Ω ID = 23 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=.

📁 IRFR034 Similar Datasheet

IRFR034A - Power MOSFET (Samsung)
IRFR010 - Transistors (IRF)
IRFR012 - Transistor (International Rectifier)
IRFR014 - Power MOSFET (Vishay)
IRFR014PBF - HEXFET Power MOSFET (International Rectifier)
IRFR020 - HEXFETR Power MOSFET (International Rectifier)
IRFR024 - HEXFET POWER MOSFET (International Rectifier)
IRFR024A - Power MOSFET (Samsung)

Other Datasheets by Fairchild Semiconductor

IRFR014A - ADVANCED POWER MOSFET
IRFR110 - N-Channel Power MOSFETs
IRFR120A - Power MOSFET
IRFR130A - Power MOSFET
IRFR210B - 200V N-Channel MOSFET
IRFR214 - Power MOSFET

Published: Aug 4, 2016 |