These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a
IRFR210B Features
* 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Se
IRFU210B_FairchildSemiconductor.pdf
Datasheet Details
IRFR210B, IRFU210B
Fairchild Semiconductor
655.26 KB
200v n-channel mosfet.
This datasheet PDF includes multiple part numbers: IRFR210B, IRFU210B.
Please refer to the document for exact specifications by model.
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