Datasheet4U Logo Datasheet4U.com

IRFR210B, IRFU210B Datasheet - Fairchild Semiconductor

IRFR210B 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFR210B Features

* 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK IRFR Series I-PAK G D S IRFU Se

IRFU210B_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: IRFR210B, IRFU210B. Please refer to the document for exact specifications by model.
IRFR210B Datasheet Preview Page 2 IRFR210B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFR210B, IRFU210B

Manufacturer:

Fairchild Semiconductor

File Size:

655.26 KB

Description:

200v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFR210B, IRFU210B.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRFR210 Power MOSFET (International Rectifier)

IRFR210 Power MOSFET (Vishay Siliconix)

IRFR210A Power MOSFET (Samsung)

IRFR210PBF HEXFET POWER MOSFET (International Rectifier)

IRFR214 Power MOSFET (Fairchild Semiconductor)

IRFR214 N-Channel Power MOSFETs (Intersil Corporation)

IRFR214 Power MOSFET (International Rectifier)

IRFR214 Power MOSFET (Vishay Siliconix)

TAGS

IRFR210B IRFU210B 200V N-Channel MOSFET Fairchild Semiconductor

IRFR210B Distributor