IRFR210B, IRFU210B - 200V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFR210B, IRFU210B
Manufacturer	Fairchild Semiconductor
File Size	655.26 KB
Description	200V N-Channel MOSFET
Datasheet	IRFU210B_FairchildSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: IRFR210B, IRFU210B. Please refer to the document for exact specifications by model.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continu.

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Published: Oct 7, 2005 |