IRFR220, IRFU220 Datasheet - Intersil Corporation

IRFR220 N-Channel Power MOSFETs

IRFR220, IRFU220 Data Sheet July 1999 File Number 2410.2 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high pow.

IRFR220 Features

* 4.6A, 200V

* rDS(ON) = 0.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFU220_IntersilCorporation.pdf

IRFR220 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFR220, IRFU220. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFR220, IRFU220

Manufacturer:

Intersil Corporation

File Size:

55.93 KB

Description:

N-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRFR220, IRFU220.
Please refer to the document for exact specifications by model.

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IRFR220 IRFU220 N-Channel Power MOSFETs Intersil Corporation

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