IRFR110 Datasheet - Intersil Corporation

IRFR110 N-Channel Power MOSFETs

IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching tran.

IRFR110 Features

* 4.7A, 100V

* rDS(ON) = 0.540Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* 175oC Operating Temperature

* Rela

IRFR110_IntersilCorporation.pdf

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Datasheet Details

Part number:

IRFR110

Manufacturer:

Intersil Corporation

File Size:

60.04 KB

Description:

N-channel power mosfets.

IRFR110 Distributor

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IRFR110 IRFR110 N-Channel Power MOSFETs Intersil Corporation