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IRFR110, IRFU110
Data Sheet July 1999 File Number
3275.3
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17441.
Features
• 4.7A, 100V • rDS(ON) = 0.
IRFR110 Datasheet
