These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a
IRFR220B Features
* 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Seri
IRFU220B_FairchildSemiconductor.pdf
Datasheet Details
IRFR220B, IRFU220B
Fairchild Semiconductor
665.76 KB
200v n-channel mosfet.
This datasheet PDF includes multiple part numbers: IRFR220B, IRFU220B.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
