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IRFR214B, IRFU214B Datasheet - Fairchild Semiconductor

IRFR214B 250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFR214B Features

* 2.2A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

IRFU214B_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: IRFR214B, IRFU214B. Please refer to the document for exact specifications by model.
IRFR214B Datasheet Preview Page 2 IRFR214B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFR214B, IRFU214B

Manufacturer:

Fairchild Semiconductor

File Size:

647.48 KB

Description:

250v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFR214B, IRFU214B.
Please refer to the document for exact specifications by model.

IRFR214B Distributor

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TAGS

IRFR214B IRFU214B 250V N-Channel MOSFET Fairchild Semiconductor