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IRFR214B, IRFU214B - 250V N-Channel MOSFET

IRFR214B Description

IRFR214B / IRFU214B November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFR214B Features

* 2.2A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRFR214B, IRFU214B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFR214B, IRFU214B
Manufacturer
Fairchild Semiconductor
File Size
647.48 KB
Datasheet
IRFU214B_FairchildSemiconductor.pdf
Description
250V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFR214B, IRFU214B.
Please refer to the document for exact specifications by model.

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250V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFR214B-like datasheet