Datasheet4U.com

IRFR214B - 250V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

📥 Download Datasheet

IRFR214B 250V N-Channel MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFR214B

Datasheet Details

Part number	IRFR214B
Manufacturer	Fairchild Semiconductor
File Size	647.48 KB
Description	250V N-Channel MOSFET
Datasheet	IRFR214B Datasheet
Note	This datasheet PDF includes multiple part numbers: IRFR214B, IRFU214B. Please refer to the document for exact specifications by model.
Additional preview pages of the IRFR214B datasheet.

Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

2.2A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
◀ ▲.
G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

📁 Similar Datasheet

IRFR214A - Power MOSFET (Samsung)
IRFR214PBF - Power MOSFET (International Rectifier)
IRFR210 - Power MOSFET (International Rectifier)
IRFR210A - Power MOSFET (Samsung)
IRFR210PBF - HEXFET POWER MOSFET (International Rectifier)
IRFR220 - N-Channel Power MOSFETs (Intersil Corporation)
IRFR220N - Power MOSFET (International Rectifier)
IRFR220NPBF - Power MOSFET (International Rectifier)

Other Datasheets by Fairchild Semiconductor

IRFR214 - Power MOSFET
IRFR210B - 200V N-Channel MOSFET
IRFR220A - Advanced Power MOSFET
IRFR220B - 200V N-Channel MOSFET
IRFR224 - Power MOSFET
IRFR224B - 250V N-Channel MOSFET

Published: Oct 7, 2005 |