Datasheet4U.com

IRFR214 - Power MOSFET

Product Overview

Fairchild Semiconductor

📥 Download Datasheet

IRFR214 Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFR214

Datasheet Details

Part number	IRFR214
Manufacturer	Fairchild Semiconductor
File Size	229.57 KB
Description	Power MOSFET
Datasheet	IRFR214 Datasheet
Additional preview pages of the IRFR214 datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 1.393Ω (Typ. ) BVDSS = 250 V RDS(on) = 2.0Ω ID = 2.2 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (T.

📁 Similar Datasheet

IRFR214A - Power MOSFET (Samsung)
IRFR214PBF - Power MOSFET (International Rectifier)
IRFR210 - Power MOSFET (International Rectifier)
IRFR210A - Power MOSFET (Samsung)
IRFR210PBF - HEXFET POWER MOSFET (International Rectifier)
IRFR220 - N-Channel Power MOSFETs (Intersil Corporation)
IRFR220N - Power MOSFET (International Rectifier)
IRFR220NPBF - Power MOSFET (International Rectifier)

Other Datasheets by Fairchild Semiconductor

IRFR214B - 250V N-Channel MOSFET
IRFR210B - 200V N-Channel MOSFET
IRFR220A - Advanced Power MOSFET
IRFR220B - 200V N-Channel MOSFET
IRFR224 - Power MOSFET
IRFR224B - 250V N-Channel MOSFET

Published: Aug 4, 2016 |