Datasheet4U Logo Datasheet4U.com

IRFR214

Power MOSFET

IRFR214 Features

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Lower Leakage Current: 10µA (Max.) @ VDS = 250V

* Lower RDS(ON): 1.393Ω (Typ.) BVDSS = 250 V RDS(on)

IRFR214 Datasheet (229.57 KB)

Preview of IRFR214 PDF

Datasheet Details

Part number:

IRFR214

Manufacturer:

Fairchild Semiconductor

File Size:

229.57 KB

Description:

Power mosfet.

📁 Related Datasheet

IRFR210 Power MOSFET (International Rectifier)

IRFR210 Power MOSFET (Vishay Siliconix)

IRFR210A Power MOSFET (Samsung)

IRFR210B 200V N-Channel MOSFET (Fairchild Semiconductor)

IRFR210PBF HEXFET POWER MOSFET (International Rectifier)

IRFR214 N-Channel Power MOSFETs (Intersil Corporation)

IRFR214 Power MOSFET (International Rectifier)

IRFR214 Power MOSFET (Vishay Siliconix)

IRFR214 N-Channel MOSFET (INCHANGE)

IRFR214A Power MOSFET (Samsung)

TAGS

IRFR214 Power MOSFET Fairchild Semiconductor

Image Gallery

IRFR214 Datasheet Preview Page 2 IRFR214 Datasheet Preview Page 3

IRFR214 Distributor