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IRFR214 - Power MOSFET

IRFR214 Description

$GYDQFHG 3RZHU 026)(7 IRFR214 .

IRFR214 Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max. ) @ VDS = 250V
* Lower RDS(ON): 1.393Ω (Typ. ) BVDSS = 250 V RDS(on)

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Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFR214-like datasheet