IRFR214 Datasheet - Fairchild Semiconductor

IRFR214 - Power MOSFET

IRFR214 Features

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Lower Leakage Current: 10µA (Max.) @ VDS = 250V

* Lower RDS(ON): 1.393Ω (Typ.) BVDSS = 250 V RDS(on)

Datasheet Details

IRFR214

Fairchild Semiconductor

229.57 KB

Power mosfet.

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