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IRFR224 Power MOSFET

IRFR224 Description

$GYDQFHG 3RZHU 026)(7 IRFR224 .

IRFR224 Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max. ) @ VDS = 250V
* Low RDS(ON): 0.742Ω (Typ. ) BVDSS = 250 V RDS(on) =

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Power MOSFET Fairchild Semiconductor
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