IRFR210A Datasheet, Mosfet, Samsung

PDF File Details

Part number:

IRFR210A

Manufacturer:

Samsung

File Size:

496.53kb

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

IRFR210A

Samsung

📁 Related Datasheet

IRFR210 - Power MOSFET (International Rectifier)
.

IRFR210 - Power MOSFET (Vishay Siliconix)
.vishay. IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .

IRFR210B - 200V N-Channel MOSFET (Fairchild Semiconductor)
IRFR210B / IRFU210B November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFR210PBF - HEXFET POWER MOSFET (International Rectifier)
.. PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free .irf. 1 12/9/04 IRFR/U210PbF 2 .irf. IRFR/U210PbF .irf..

IRFR214 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFR214 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFR214 - N-Channel Power MOSFETs (Intersil Corporation)
IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon .

IRFR214 - Power MOSFET (International Rectifier)
.

IRFR214 - Power MOSFET (Vishay Siliconix)
.vishay. IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF.

IRFR214 - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor IRFR214 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.

IRFR214A - Power MOSFET (Samsung)

     
   )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.