IRFR234A
Samsung
754.57kb
Power mosfet.
TAGS
📁 Related Datasheet
IRFR234 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRFR234
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFR234B - 250V N-Channel MOSFET
(Fairchild Semiconductor)
IRFR234B / IRFU234B
November 2001
IRFR234B / IRFU234B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
IRFR2307Z - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 96910
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive.
IRFR2307Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFR2307Z, IIRFR2307Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche .
IRFR2307ZPbF - Power MOSFET
(International Rectifier)
PD - 96191B
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Al.
IRFR230A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFR230B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRFR230B / IRFU230B
IRFR230B / IRFU230B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are.
IRFR210 - Power MOSFET
(International Rectifier)
.
IRFR210 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
IRFR210A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
