IRFR230A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) IRFR/U230A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 7.5 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2
IRFU230A-FairchildSemiconductor.pdf
Datasheet Details
IRFR230A, IRFU230A
Fairchild Semiconductor
280.64 KB
Advanced power mosfet.
This datasheet PDF includes multiple part numbers: IRFR230A, IRFU230A.
Please refer to the document for exact specifications by model.
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