IRFR2307Z
International Rectifier
297.15kb
Automotive mosfet. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext
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IRFR2307Z - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
IRFR2307Z, IIRFR2307Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche .
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These N-Channel enhancement mode power field effect transistors are.
IRFR234 - Power MOSFET
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$GYDQFHG 3RZHU 026)(7
IRFR234
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♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFR234A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
IRFR234B - 250V N-Channel MOSFET
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IRFR234B / IRFU234B
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These N-Channel enhancement mode power field effect .
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IRFR210 - Power MOSFET
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.vishay.
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
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PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
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Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.