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IRFR2307ZPbF - Power MOSFET

IRFR2307ZPbF Description

PD - 96191B .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRFR2307ZPbF Applications

* IRFR2307ZPbF IRFU2307ZPbF HEXFET® Power MOSFET D VDSS = 75V G RDS(on) = 16mΩ S ID = 42A D-Pak I-Pak IRFR2307ZPbF IRFU2307ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC =

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Power MOSFET International Rectifier
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