IRFR210PBF
International Rectifier
2.13MB
Hexfet power mosfet.
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IRFR210 - Power MOSFET
(International Rectifier)
.
IRFR210 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
IRFR210A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
IRFR210B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRFR210B / IRFU210B
November 2001
IRFR210B / IRFU210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
IRFR214 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRFR214
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFR214 - N-Channel Power MOSFETs
(Intersil Corporation)
IRFR214, IRFU214
Data Sheet July 1999 File Number
3274.2
2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon .
IRFR214 - Power MOSFET
(International Rectifier)
.
IRFR214 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFR214, IRFU214, SiHFR214, SiHFU214
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSF.
IRFR214 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFR214
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFR214A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
