IRFR224A Datasheet, Mosfet, Samsung

PDF File Details

Part number:

IRFR224A

Manufacturer:

Samsung

File Size:

504.66kb

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

IRFR224A

Samsung

📁 Related Datasheet

IRFR224 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFR224 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFR224 - Power MOSFET (International Rectifier)
.

IRFR224 - Power MOSFET (Vishay Siliconix)
.vishay. IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .

IRFR224 - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor IRFR224 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.1Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.

IRFR224B - 250V N-Channel MOSFET (Fairchild Semiconductor)
IRFR224B / IRFU224B November 2001 IRFR224B / IRFU224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFR220 - N-Channel Power MOSFETs (Intersil Corporation)
IRFR220, IRFU220 Data Sheet July 1999 File Number 2410.2 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon .

IRFR220 - Power MOSFET (Vishay Siliconix)
.vishay. IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF.

IRFR220 - Power MOSFET (International Rectifier)
.

IRFR220 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for .

IRFR220A - Advanced Power MOSFET (Fairchild Semiconductor)
.. Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.