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IRFR214 Datasheet - Intersil Corporation

IRFR214 N-Channel Power MOSFETs

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sh.
IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching tr.

IRFR214 Features

* 2.2A, 250V

* rDS(ON) = 2.000Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* High Input Impedance

* 150oC Operating Temperature

* Related Literature - TB334 “Guidelines for Sol

IRFR214 Datasheet (52.94 KB)

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Datasheet Details

Part number:

IRFR214

Manufacturer:

Intersil Corporation

File Size:

52.94 KB

Description:

N-channel power mosfets.

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IRFR214 N-Channel Power MOSFETs Intersil Corporation

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