IRFR214, IRFU214 Datasheet - Intersil Corporation

IRFR214 N-Channel Power MOSFETs

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IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching tr.

IRFR214 Features

* 2.2A, 250V

* rDS(ON) = 2.000Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* High Input Impedance

* 150oC Operating Temperature

* Related Literature - TB334 “Guidelines for Sol

IRFU214_IntersilCorporation.pdf

IRFR214 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFR214, IRFU214. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFR214, IRFU214

Manufacturer:

Intersil Corporation

File Size:

52.94 KB

Description:

N-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRFR214, IRFU214.
Please refer to the document for exact specifications by model.

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IRFR214 IRFU214 N-Channel Power MOSFETs Intersil Corporation

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