* 2.2A, 250V
* rDS(ON) = 2.000Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* High Input Impedance
* 150oC Operating Temperature
* Related Literature - TB334 “Guidelines for Sol
IRFR214
Intersil Corporation
52.94 KB
N-channel power mosfets.
IRFR214, IRFU214
Data Sheet July 1999 File Number
3274.2
2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon .
📁 Related Datasheet
IRFR210 Power MOSFET (International Rectifier)
IRFR210 Power MOSFET (Vishay Siliconix)
IRFR210A Power MOSFET (Samsung)
IRFR210B 200V N-Channel MOSFET (Fairchild Semiconductor)
IRFR210PBF HEXFET POWER MOSFET (International Rectifier)
IRFR214 Power MOSFET (Fairchild Semiconductor)
IRFR214 Power MOSFET (International Rectifier)
IRFR214 Power MOSFET (Vishay Siliconix)
IRFR214 N-Channel MOSFET (INCHANGE)
IRFR214A Power MOSFET (Samsung)
