IRFR130A Datasheet, Mosfet, Fairchild Semiconductor

IRFR130A Features

• Mosfet Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Low

PDF File Details

Part number:

IRFR130A

Manufacturer:

Fairchild Semiconductor

File Size:

261.31kb

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

IRFR130A

Fairchild Semiconductor

📁 Related Datasheet

IRFR13N15D - Power MOSFET (International Rectifier)
PD - 93905A SMPS MOSFET Applications High frequency DC-DC converters IRFR13N15D IRFU13N15D HEXFET® Power MOSFET l VDSS 150V RDS(on) max 0.18Ω ID.

IRFR13N15D - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRFR13N15D, IIRFR13N15D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤180mΩ ·Enhancement mode: ·100% avalanch.

IRFR13N15DPBF - HEXFET Power MOSFET (International Rectifier)
PD - 95549A SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRFR13N15DPbF IRFU13N15DPbF HEXFET® Power MOSFET VDSS 150V RDS(.

IRFR13N20D - Power MOSFET (International Rectifier)
PD- 93814A SMPS MOSFET Applications l High frequency DC-DC converters IRFR13N20D IRFU13N20D HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.235Ω ID .

IRFR13N20D - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤235mΩ ·Enhancement mode: ·100% avalanch.

IRFR13N20DPbF - Power MOSFET (International Rectifier)
• Lead-Free SMPS MOSFET PD-95354A IRFR13N20DPbF IRFU13N20DPbF .irf. 1 1/17/05 IRFR/U13N20DPbF 2 .irf. IRFR/U13N20DPbF .irf. .

IRFR1010Z - AUTOMOTIVE MOSFET (International Rectifier)
.

IRFR1010Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRFR1010Z, IIRFR1010Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.5mΩ ·Enhancement mode: ·100% avalanche.

IRFR1010ZPBF - AUTOMOTIVE MOSFET (International Rectifier)
PD - 95951 AUTOMOTIVE MOSFET Features l l l l l l IRFR1010ZPbF IRFU1010ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resist.

IRFR1018E - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRFR1018E, IIRFR1018E ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche.