IRFR1010ZPBF - AUTOMOTIVE MOSFET

International Rectifier

IRFR1010ZPBF Datasheet Preview — Preview of IRFR1010ZPBF PDF

Datasheet Details

Part number	IRFR1010ZPBF
Manufacturer	International Rectifier ↗
File Size	380.09 KB
Description	AUTOMOTIVE MOSFET
Datasheet	IRFR1010ZPBF_InternationalRectifier.pdf

IRFR1010ZPBF Product details

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

l l l l l l IRFR1010ZPbF IRFU1010ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 7.5mΩ.

📁 IRFR1010ZPBF Similar Datasheet

IRFR1018E - N-Channel MOSFET (INCHANGE)
IRFR110 - N-Channel Power MOSFETs (Intersil Corporation)
IRFR110A - Power MOSFET (Samsung)
IRFR120A - Power MOSFET (Fairchild Semiconductor)
IRFR120NTRPBF - N-Channel MOSFET (VBsemi)
IRFR120Z - N-Channel MOSFET (INCHANGE)
IRFR130A - Power MOSFET (Fairchild Semiconductor)
IRFR13N15D - N-Channel MOSFET (INCHANGE)

Other Datasheets by International Rectifier

IRFR1010Z - AUTOMOTIVE MOSFET
IRFR1018EPbF - Power MOSFET
IRFR120 - POWER MOSFET
IRFR1205 - Power MOSFET
IRFR1205PBF - Power MOSFET
IRFR120N - Power MOSFET

Published: Jun 8, 2007 |