IRFR120N Datasheet - International Rectifier

IRFR120N Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRFR120N Features

* 3 5 ) 1 .0 2 (.0 4 0 ) 1 .6 4 (.0 2 5 ) 1 2 3 -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 1 .1 4 (.0 4 5 ) 2 X 0 .7 6 (.0 3 0 ) 2 .2 8 (.0 9 0 ) 4 .5 7 (.1 8 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 (.0 1 0 ) M A M B 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 .2 7 (.0 5 0 ) 0 .8

IRFR120N_InternationalRectifier.pdf