IRFR120N Datasheet - International Rectifier

IRFR120N, Power MOSFET

PD - 91365B IRFR/U120N HEXFET® Power MOSFET l l l l l Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Process Technology Fast Switching F.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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IRFR120N_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFR120N

Manufacturer:

International Rectifier

File Size:

152.66 KB

Description:

Power MOSFET

Features

* 3 5 ) 1 .0 2 (.0 4 0 ) 1 .6 4 (.0 2 5 ) 1 2 3 -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 1 .1 4 (.0 4 5 ) 2 X 0 .7 6 (.0 3 0 ) 2 .2 8 (.0 9 0 ) 4 .5 7 (.1 8 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 (.0 1 0 ) M A M B 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 .2 7 (.0 5 0 ) 0 .8

Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P A K T O -252 A A

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IRFR120N Power MOSFET International Rectifier

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