IRFR120NTRPBF Datasheet - VBsemi

IRFR120NTRPBF, N-Channel MOSFET

IRFR120NTRPBF www.VBsemi.com IRFR120NTRPBF N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 T.

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous S

IRFR120NTRPBF-VBsemi.pdf