IRFR120A Datasheet - Fairchild Semiconductor

IRFR120A, Power MOSFET

Advanced Power MOSFET .

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ. ) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate

IRFR120A_FairchildSemiconductor.pdf