IRFR110 Datasheet - Fairchild Semiconductor

IRFR110 N-Channel Power MOSFETs

Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiri.

IRFR110 Features

* 4.7A, 100V

* rDS(ON) = 0.540Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* 175oC Operating Temperature

* Rel

IRFR110 Datasheet (95.15 KB)

IRFR110 Datasheet Preview — Preview of IRFR110 PDF

Datasheet Details

Part number:

IRFR110

Manufacturer:

Fairchild Semiconductor

File Size:

95.15 KB

Description:

N-channel power mosfets.

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IRFR110 N-Channel Power MOSFETs Fairchild Semiconductor

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