IRFR110 N-Channel Power MOSFETs

Fairchild Semiconductor

Description

Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld.

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Datasheet Specifications

Part number: IRFR110
Manufacturer: Fairchild Semiconductor
File Size: 95.15 KB
Datasheet: IRFR110-FairchildSemiconductor.pdf
Description: N-Channel Power MOSFETs

Features

* 4.7A, 100V
* rDS(ON) = 0.540Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* 175oC Operating Temperature
* Rel

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17441. Ordering

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IRFR110 N-Channel Power MOSFETs Fairchild Semiconductor

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