IRFR1010Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFR1010Z, IIRFR1010Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤7.5mΩ ·Enhancement mode: ·100% avalanche.
IRFR1010ZPBF - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 95951
AUTOMOTIVE MOSFET
Features
l l l l l l
IRFR1010ZPbF IRFU1010ZPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resist.
IRFR1018E - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFR1018E, IIRFR1018E
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche.
IRFR1018EPbF - Power MOSFET
(International Rectifier)
Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .
IRFR110 - N-Channel Power MOSFETs
(Intersil Corporation)
IRFR110, IRFU110
Data Sheet July 1999 File Number
3275.3
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon .
IRFR110 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFR110, SiHFR110
Vishay Siliconix
Power MOSFET
DPAK (TO-252) D
D G
S G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) .
IRFR110 - N-Channel Power MOSFETs
(Fairchild Semiconductor)
Data Sheet
IRFR110, IRFU110
January 2002
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field.
IRFR110 - Power MOSFET
(International Rectifier)
.
IRFR110A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
IRFR120 - POWER MOSFET
(International Rectifier)
.
