IRFR1018EPbF Datasheet - International Rectifier

IRFR1018EPbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97129 IRFR1018EPbF IRFU1018EPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: max. 8.4m: G ID (Silicon Limited) 79A c S ID (Package Limited) 56.

IRFR1018EPbF Features

* f.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in

IRFR1018EPbF-InternationalRectifier.pdf