IRFSL4115PbF - Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 150V 10.3m: 12.1m: ID (Silicon Limited) c99A S ID (Package Lim.
IRFSL4115PbF Features
* dif/dt www.irf.com
0 0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 17 - Typical Stored Charge vs. dif/dt
5
IRFS/SL4115PbF
+
-
RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W. Period
* Circuit Layout Considerations
* Low Stray Inductance
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* Ground Plane